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New Semiconductors - Discretes

ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Bipolar transistors
DIOTEC
Bipolar transistors
DIOTEC
Broad range of Bridge Rectifiers that maximize board space and improve reliability
DIODES
Broad range of Bridge Rectifiers that maximize board space and improve reliability
DIODES
Infineon CoolGaN™ 100 V e‑Mode Power Transistor
INFINEON
Infineon CoolGaN™ 100 V e‑Mode Power Transistor
INFINEON
YAGEO XSEMI range MOSFETS
YAGEO XSEMI
YAGEO XSEMI range MOSFETS
YAGEO XSEMI
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
600V Gallium Nitride (GaN) Transistor
INFINEON
600V Gallium Nitride (GaN) Transistor
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
TTV Eps 3

DISCOVER TOP TECH VOICES – SEASON 2

Neuro-Tech and Brain Interfaces

INFINEON

New IGBT Modules from Infineon

New IGBT Modules from Infineon
15% OFF online orders Over RM500

15% OFF online orders Over RM500

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Semicon 2026

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