Product Information
Product Overview
The IS42S16400J-7TLI is a 64MB Synchronous DRAM is organized as 1,048,576 bits x 16 bits x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 64MB SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216 bit bank is organized as 4,096 rows by 256 columns by 16 bits. The 64MB SDRAM includes an AUTO REFRESH MODE and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.
- Synchronous with 3.3V Power Supply
- LVTTL Interface
- Programmable Burst Length (1, 2, 4, 8, Full Page)
- Sequential/Interleave Programmable Burst Sequence
- Self Refresh and Auto Refresh Modes
- Random Column Address Every Clock Cycle
- Programmable CAS Latency (2, 3 Clocks)
- Burst Read/Write and Burst Read/Single Write
- Long-term Support
- 200, 166, 143 and 133MHz Clock Frequency
- Fully Synchronous, All Signals Referenced to a Positive Clock Edge
- Internal Bank for Hiding Row Access/Pre-charge
- 4096 Refresh Cycles Every 64ms (Com, Ind, A1 Grade) or 16ms (A2 Grade)
Applications
Computers & Computer Peripherals, Industrial
Warnings
Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device.
Technical Specifications
SDR
4M x 16bit
TSOP-II
3.3V
-40°C
IS42S
No SVHC (23-Jan-2024)
64Mbit
143MHz
54Pins
Surface Mount
85°C
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate