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IRF6668TR1PBF
MOSFET, N, DIRECTFET, MZ
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6668TR1PBF
Order Code1388571
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id55A
Drain Source On State Resistance0.015ohm
Transistor Case StyleDirectFET MZ
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.8mW
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
55A
Transistor Case Style
DirectFET MZ
Rds(on) Test Voltage
10V
Power Dissipation
2.8mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.015ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
5Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001