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No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoSI4420DYPBF
Order Code1013451
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12.5A
Drain Source On State Resistance9000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The SI4420DYPBF is a HEXFET® single N-channel Power MOSFET offers low switching losses and low conduction losses. The low ON-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications. The package with copper lead-frame offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
- Low gate charge
- Logic level drive
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Morocco
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Morocco
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005