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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN180N10
Order Code4905672
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id180A
Drain Source Voltage Vds100V
Drain Source On State Resistance0.008ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation600W
Operating Temperature Max150°C
Product Range-
Alternatives for IXFN180N10
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Product Overview
The IXFN180N10 is a 100V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- miniBLOC with aluminium nitride isolation
- Low drain-to-tab capacitance
- Low inductance
- Avalanche rated
- Easy to mount
- Space-saving s
Applications
Power Management, Industrial, Lighting
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Rds(on) Test Voltage
10V
Power Dissipation
600W
Product Range
-
Continuous Drain Current Id
180A
Drain Source On State Resistance
0.008ohm
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.042