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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN230N10
Order Code3582073
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id230A
Drain Source Voltage Vds100V
Drain Source On State Resistance0.006ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation700W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (25-Jun-2020)
Product Overview
The IXFN230N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- MiniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Avalanche rating
- Guaranteed FBSOA
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Lighting
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Rds(on) Test Voltage
10V
Power Dissipation
700W
Product Range
-
Continuous Drain Current Id
230A
Drain Source On State Resistance
0.006ohm
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
No SVHC (25-Jun-2020)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2020)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.046