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Quantity | Price |
---|---|
1+ | RM28.990 |
10+ | RM16.390 |
100+ | RM15.310 |
500+ | RM14.730 |
1000+ | RM14.710 |
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RM28.99
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTA1R6N100D2HV
Order Code3930414
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id1.6A
Drain Source On State Resistance10ohm
Transistor Case StyleTO-263HV
Transistor MountingSurface Mount
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max4.5V
Power Dissipation100W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
N-channel high voltage depletion mode power MOSFET suitable for use in audio amplifiers, start-up circuits, protection circuits, Ramp generators, current regulators and active loads applications.
- High voltage package
- High blocking voltage
- Normally ON mode
- Moulding epoxies meet UL94V-0 flammability classification
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
TO-263HV
Rds(on) Test Voltage
0V
Power Dissipation
100W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001