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IXTY1R6N100D2
Power MOSFET, N Channel, 1 kV, 1.6 A, 0.01 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | RM20.890 |
| 10+ | RM10.810 |
| 100+ | RM10.360 |
| 500+ | RM9.910 |
| 1000+ | RM9.720 |
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTY1R6N100D2
Order Code3930035
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id1.6A
Drain Source On State Resistance0.01ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation100W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
N-channel depletion mode MOSFET suitable for use in audio amplifiers, start-up circuits, protection circuits, Ramp generators, current regulators and active loads applications.
- Normally ON mode
- Moulding epoxies meet UL94V-0 flammability classification
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
0V
Power Dissipation
100W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
0.01ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001