2N5551
Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 625 mW, TO-92, Through Hole
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| Quantity | Price |
|---|---|
| 5+ | RM0.921 |
| 10+ | RM0.735 |
| 100+ | RM0.524 |
| 500+ | RM0.368 |
| 1000+ | RM0.264 |
| 5000+ | RM0.230 |
Product Information
Product Overview
The 2N5551 transistor is a silicon NPN general-purpose transistor with a maximum collector-emitter voltage of 160V and a maximum collector current of 600mA. It has a high current gain of 80-200, making it suitable for a wide range of applications. The transistor is 100% avalanche tested and has an excellent safe operating area, ensuring reliable operation in demanding environments. The 2N5551 is also designed to withstand high surge currents, making it ideal for applications that require robust performance.
- High-performance amplification
- Efficient switching
- Reliable operation in harsh environments
- Easy design and implementation
- High surge current capability
- Wide range of applications
- Meets or exceeds all applicable industry standards, including JEDEC, EIA, and ISO
- Compliant with RoHS and WEEE regulations
Applications
Audio, DC/DC Converters, Motor Speed Controls, Power Supplies, Industrial Automation, LED Lighting, Automotive Systems, Medical Electronics, Telecommunications, Computers & Computer Peripherals
Technical Specifications
NPN
600mA
TO-92
3Pins
80hFE
Multicomp Pro Bipolar NPN Transistors
MSL 1 - Unlimited
160V
625mW
Through Hole
300MHz
150°C
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate