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BUK7M45-40EX
Power MOSFET, N Channel, 40 V, 19 A, 0.033 ohm, SOT-1210, Surface Mount
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Manufacturer Standard Lead Time: 15 week(s)
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| Quantity | Price |
|---|---|
| 50+ | RM1.280 |
| 200+ | RM1.180 |
| 500+ | RM1.080 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM128.00
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK7M45-40EX
Order Code2760372RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id19A
Drain Source On State Resistance0.033ohm
Transistor Case StyleSOT-1210
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation31W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Product Overview
BUK7M45-40EX is a standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. It has 6.2nC typ total gate charge, 1.6nC typ gate-source charge, 2.2nC typ gate-drain charge at ID = 5A, VDS = 32V, VGS = 10V, Tj = 25°C). Typical applications include 12V automotive systems, motors, lamps and solenoid control, transmission control and ultra high performance power switching.
- Repetitive avalanche rated, suitable for thermally demanding environments due to 175°C rating
- True standard level gate with VGS(th) rating of greater than 1V at 175°C
- 40V minimum drain-source breakdown voltage at ID = 250µA, VGS = 0V, Tj = 25°C
- 3V typical gate-source threshold voltage at ID = 1mA, VDS = VGS, Tj = 25°C
- 0.01µA typical drain leakage current at VDS = 40V, VGS = 0V, Tj = 25°C
- 2nA typical gate leakage current at VGS = 20V, VDS = 0V, Tj = 25°C
- 33mohm typical drain-source on-state resistance at VGS = 10V, ID = 5A, Tj = 25°C
- Junction temperature range from -55 to 175°C
- 0.86V typical source-drain voltage at IS = 5A, VGS = 0V, Tj = 25°C
- 10.6ns reverse recovery time at IS = 5A, dIS/dt = -100A/µs, VGS = 0V, VDS = 25V, Tj= 25°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
19A
Transistor Case Style
SOT-1210
Rds(on) Test Voltage
10V
Power Dissipation
31W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.033ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000072