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NGW75T65H3DFPQ
IGBT, 80 A, 1.68 V, 502 W, 650 V, TO-247, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoNGW75T65H3DFPQ
Order Code4697665RL
Your Part Number
Technical Datasheet
446 In Stock
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| Quantity | Price |
|---|---|
| 10+ | RM28.600 |
| 100+ | RM28.030 |
| 500+ | RM27.460 |
| 1000+ | RM26.890 |
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RM286.00
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNGW75T65H3DFPQ
Order Code4697665RL
Technical Datasheet
SVHCLead (25-Jun-2025)
Product Overview
NGW75T65H3DFPQ is a 650V, 75A trench field-stop IGBT with full rated silicon diode in a 3 pin TO-247 package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650V, 75A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
- HV-H3TRB qualified
Technical Specifications
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001