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BU406G
Bipolar (BJT) Single Transistor, NPN, 200 V, 7 A, 60 W, TO-220, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | RM9.720 |
| 10+ | RM4.720 |
| 100+ | RM4.090 |
| 500+ | RM3.000 |
| 1000+ | RM3.000 |
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RM9.72
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBU406G
Order Code2535618
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max200V
Continuous Collector Current7A
Power Dissipation60W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency10MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
7A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
10hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
200V
Power Dissipation
60W
Transistor Mounting
Through Hole
Transition Frequency
10MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Associated Products
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002041