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Available until stock is exhausted
| Quantity | Price |
|---|---|
| 1+ | RM10.250 |
| 10+ | RM5.620 |
| 100+ | RM4.100 |
| 500+ | RM3.590 |
| 1000+ | RM3.480 |
| 5000+ | RM3.420 |
Price for:Each
Minimum: 1
Multiple: 1
RM10.25
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP8N50NZ
Order Code3368768
Product RangeUniFET II
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id8A
Drain Source On State Resistance0.77ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation130W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeUniFET II
Qualification-
SVHCNo SVHC (15-Jan-2018)
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Product Overview
Notes
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
130W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.77ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
UniFET II
SVHC
No SVHC (15-Jan-2018)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002