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| Quantity | Price |
|---|---|
| 1+ | RM14.710 |
| 10+ | RM7.410 |
| 100+ | RM6.620 |
| 500+ | RM5.390 |
| 1000+ | RM5.220 |
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Minimum: 1
Multiple: 1
RM14.71
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDPF12N60NZ
Order Code3368771
Product RangeUniFET II
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id12A
Drain Source On State Resistance0.53ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation39W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeUniFET II
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.53ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
UniFET II
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002