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Quantity | Price |
---|---|
1+ | RM39.190 |
5+ | RM33.110 |
10+ | RM27.020 |
50+ | RM24.520 |
100+ | RM22.010 |
250+ | RM22.010 |
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RM39.19
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ21193G
Order Code9556613
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max250V
Continuous Collector Current16A
Power Dissipation250W
Transistor Case StyleTO-3
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency4MHz
DC Current Gain hFE Min75hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The MJ21193G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
- Total harmonic distortion characterized
- High DC current gain
- Excellent gain linearity
- High SOA
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
16A
Transistor Case Style
TO-3
No. of Pins
3Pins
DC Current Gain hFE Min
75hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
250V
Power Dissipation
250W
Transistor Mounting
Through Hole
Transition Frequency
4MHz
Operating Temperature Max
200°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.015082