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MJ802G
Bipolar (BJT) Single Transistor, NPN, 90 V, 30 A, 200 W, TO-204, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | RM33.980 |
| 5+ | RM29.170 |
| 10+ | RM24.360 |
| 50+ | RM23.380 |
| 100+ | RM21.000 |
| 250+ | RM20.700 |
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Multiple: 1
RM33.98
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ802G
Order Code2535622
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max90V
Continuous Collector Current30A
Power Dissipation200W
Transistor Case StyleTO-204
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency2MHz
DC Current Gain hFE Min25hFE
Operating Temperature Max200°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The MJ802G is a 90V Silicon NPN Bipolar High Power Transistor for use as an output device in complementary audio amplifiers to 100W music power per channel.
- High DC current gain
- Excellent safe operating area
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vcbo = 4V)
Applications
Audio
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
30A
Transistor Case Style
TO-204
No. of Pins
2Pins
DC Current Gain hFE Min
25hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
90V
Power Dissipation
200W
Transistor Mounting
Through Hole
Transition Frequency
2MHz
Operating Temperature Max
200°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Associated Products
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01202