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MJE13003G
Bipolar (BJT) Single Transistor, NPN, 400 V, 1.5 A, 1.4 W, TO-126, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE13003G
Order Code9556273
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Continuous Collector Current1.5A
Power Dissipation1.4W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency10MHz
DC Current Gain hFE Min4hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
4hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
400V
Power Dissipation
1.4W
Transistor Mounting
Through Hole
Transition Frequency
10MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00064