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MJE200G
Bipolar (BJT) Single Transistor, NPN, 40 V, 5 A, 15 W, TO-225, Through Hole
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2,800 In Stock
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| Quantity | Price |
|---|---|
| 1+ | RM5.750 |
| 10+ | RM3.710 |
| 100+ | RM2.460 |
| 500+ | RM1.930 |
| 1000+ | RM1.590 |
| 5000+ | RM1.520 |
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Multiple: 1
RM5.75
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE200G
Order Code2535634
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max40V
Continuous Collector Current5A
Power Dissipation15W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency65MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
5A
Transistor Case Style
TO-225
No. of Pins
3Pins
DC Current Gain hFE Min
10hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
40V
Power Dissipation
15W
Transistor Mounting
Through Hole
Transition Frequency
65MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Associated Products
6 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00068