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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE3055TG
Order Code2535636
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current10A
Power Dissipation75W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min5hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The MJE3055TG is a 60V NPN complementary plastic silicon Bipolar Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
- DC current gain specified to 10A
- High current gain - bandwidth
- 70VDC Collector to base voltage (VCBO)
- 5V Emitter to base voltage (VEBO)
- 6ADC Base current (IB)
- 1.67°C/W Thermal resistance, junction to case
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
10A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
5hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Power Dissipation
75W
Transistor Mounting
Through Hole
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for MJE3055TG
2 Products Found
Associated Products
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002808