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MJE4343G
TRANSISTOR, RF BIPOLAR
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE4343G
Order Code1653704
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Continuous Collector Current16A
Power Dissipation125W
Transistor Case StyleTO-218
Transistor MountingThrough Hole
No. of Pins3Pins
DC Current Gain hFE Min35hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
16A
Transistor Case Style
TO-218
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
160V
Power Dissipation
125W
Transistor Mounting
Through Hole
DC Current Gain hFE Min
35hFE
Product Range
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.15