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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMD6P02R2G
Order Code1431306
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id7.8A
Drain Source On State Resistance0.033ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max880mV
Power Dissipation2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for NTMD6P02R2G
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Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
7.8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.033ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
880mV
No. of Pins
8Pins
Product Range
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005