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NXH006P120MNF2PTG
Silicon Carbide MOSFET, EliteSiC, Half Bridge, N Channel, 304 A, 1.2 kV, 0.00548 ohm, Module
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| Quantity | Price |
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| 1+ | RM1,051.570 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH006P120MNF2PTG
Order Code3766231
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id304A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.00548ohm
Transistor Case StyleModule
No. of Pins36Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.83V
Power Dissipation950W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
304A
Drain Source On State Resistance
0.00548ohm
No. of Pins
36Pins
Gate Source Threshold Voltage Max
2.83V
Operating Temperature Max
175°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
20V
Power Dissipation
950W
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.09