Print Page
ECH8690-TL-H
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 4.7 A, 4.7 A, 0.042 ohm
Image is for illustrative purposes only. Please refer to product description.
581 In Stock
Need more?
581 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | RM2.300 |
| 500+ | RM2.080 |
| 3000+ | RM1.800 |
| 9000+ | RM1.590 |
| 24000+ | RM1.560 |
| 45000+ | RM1.530 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM230.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoECH8690-TL-H
Order Code2845400RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id4.7A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.042ohm
Continuous Drain Current Id N Channel4.7A
Continuous Drain Current Id P Channel4.7A
Drain Source On State Resistance N Channel0.042ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.042ohm
Transistor Case StyleECH
Gate Source Threshold Voltage Max-
Power Dissipation Pd1.5W
No. of Pins8Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
4.7A
On Resistance Rds(on)
0.042ohm
Continuous Drain Current Id P Channel
4.7A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.042ohm
Gate Source Threshold Voltage Max
-
No. of Pins
8Pins
Power Dissipation P Channel
1.5W
Product Range
-
Automotive Qualification Standard
-
SVHC
Lead (27-Jun-2024)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
4.7A
Drain Source On State Resistance N Channel
0.042ohm
Rds(on) Test Voltage
10V
Transistor Case Style
ECH
Power Dissipation Pd
1.5W
Power Dissipation N Channel
1.5W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536