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FDMD8560L
Dual MOSFET, PowerTrench, N Channel, 60 V, 93 A, 0.0025 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDMD8560L
Order Code2610668RL
Product RangePowerTrench Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | RM12.250 |
| 500+ | RM10.560 |
| 3000+ | RM10.330 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
RM1,225.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMD8560L
Order Code2610668RL
Product RangePowerTrench Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id93A
On Resistance Rds(on)0.0025ohm
Continuous Drain Current Id N Channel93A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0025ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Transistor Case StylePQFN
No. of Pins8Pins
Power Dissipation Pd48W
Power Dissipation N Channel48W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangePowerTrench Series
Qualification-
Automotive Qualification Standard-
Product Overview
FDMD8560L is a dual N-channel PowerTrench® MOSFET. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Application includes synchronous buck primary switch of half / full bridge converter for telecom, motor bridge primary switch of half / full bridge converter for BLDC motor, MV POL 48V synchronous buck switch, and half/full bridge secondary synchronous rectification.
- Ideal for flexible layout in primary side of bridge topology
- 100% UIL tested, kelvin high side MOSFET drive Pin-out capability
- Static drain to source on resistance is 2.5mohm (typ, VGS = 10V, ID = 22A, Q1)
- Drain to source voltage is 60V (Q1, Q2, typ, TA = 25°C)
- Gate to source threshold voltage is 1.0V (typ, Q1, Q2, VGS = VDS, ID = 250µA)
- Power dissipation is 48W (typ, Q1, Q2, TC = 25°C)
- Rise time is 15ns (typ, Q1, Q2, VDD = 30V, ID = 22A, VGS = 10V, RGEN = 6ohm)
- Reverse recovery time is 53ns (Q1, Q2, IF = 22A, di/dt = 100A/μs, typ)
- Operating and storage junction temperature range from -55 to +150°C, power 5 x 6 package
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.0025ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.0025ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PQFN
Power Dissipation Pd
48W
Power Dissipation P Channel
-
Product Range
PowerTrench Series
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
93A
Continuous Drain Current Id N Channel
93A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.6V
No. of Pins
8Pins
Power Dissipation N Channel
48W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000254