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FDN5618P
Power MOSFET, P Channel, 60 V, 1.25 A, 0.17 ohm, SuperSOT, Surface Mount
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| Quantity | Price |
|---|---|
| 100+ | RM1.320 |
| 500+ | RM1.040 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM132.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN5618P
Order Code9846344RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id1.25A
Drain Source On State Resistance0.17ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1.25A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
10V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.17ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Associated Products
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000035