FDT457N
Power MOSFET, N Channel, 30 V, 5 A, 0.06 ohm, SOT-223, Surface Mount
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| Quantity | Price |
|---|---|
| 4000+ | RM1.830 |
| 12000+ | RM1.800 |
| 32000+ | RM1.760 |
| 60000+ | RM1.730 |
Product Information
Product Overview
The FDT457N is a 30V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. It is well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits and DC motor control. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V continuous gate source voltage (VGSS)
- 42°C/W Thermal resistance, junction to ambient
- 12°C/W thermal resistance, junction to case
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
5A
SOT-223
10V
3W
150°C
-
Lead (27-Jun-2024)
30V
0.06ohm
Surface Mount
3V
4Pins
-
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate