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FDV303N
Power MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 5+ | RM1.630 |
| 10+ | RM1.030 |
| 100+ | RM0.485 |
| 500+ | RM0.470 |
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Multiple: 5
RM8.15
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV303N
Order Code9845020
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id680mA
Drain Source On State Resistance0.45ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDV303N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V and designed for application in battery circuits using either one lithium or three cadmium or NHM cells, inverters, high efficiency miniature discrete DC/DC conversion in electronic devices like cellular phones and pagers.
- Drain to source voltage (Vds) of 25V
- Gate to source voltage of 8V
- Continuous drain current (Id) of 680mA
- Power dissipation (Pd) of 350mW
- Low on state resistance of 330mohm at Vgs 4.5V
- Operating temperature range -55°C to 150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
680mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
0.45ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Associated Products
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000035