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FGL60N100BNTD.
IGBT, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins
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No Longer Manufactured
Product Information
Product Overview
The FGL60N100BNTD is a 1000V NPT Trench IGBT with high speed switching. It is in a non-punch through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Optimized manufacturing process results in better control and repeatability This product is general usage and suitable for many different applications.
- Low saturation voltage
- High input impedance
- High speed switching
- Built-in fast recovery diode
Technical Specifications
Continuous Collector Current
60A
Power Dissipation
180W
No. of Pins
3Pins
Transistor Mounting
Through Hole
Collector Emitter Saturation Voltage
2.9V
Transistor Case Style
TO-264
Operating Temperature Max
150°C
Product Range
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.012461