Print Page
MGSF1N03LT1G
Power MOSFET, N Channel, 30 V, 2.1 A, 0.1 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 18 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 3000+ | RM0.707 |
| 9000+ | RM0.706 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
RM2,121.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMGSF1N03LT1G
Order Code2442038
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2.1A
Drain Source On State Resistance0.1ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation730mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MGSF1N03LT1G is a N-channel miniature surface-mount Power MOSFET with low RDS (ON) assure minimal power loss and conserve energy. The device is ideal for use in space sensitive power management circuitry. It is suitable for DC-to-DC converters, power management in portable and battery-powered products such as printers, PCMCIA cards, cellular and cordless telephones.
- Low RDS (ON) provides higher efficiency and extends battery life
- Miniature surface-mount package saves board space
- -55 to 150°C Operating junction temperature range
Applications
Portable Devices, Consumer Electronics, Power Management, Computers & Computer Peripherals, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.1A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
730mW
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for MGSF1N03LT1G
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001