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NTBL075N065SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 37 A, 650 V, 0.085 ohm, H-PSOF
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ManufacturerONSEMI
Manufacturer Part NoNTBL075N065SC1
Order Code4472905RL
Product RangeEliteSiC Series
Technical Datasheet
1,980 In Stock
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| Quantity | Price |
|---|---|
| 10+ | RM24.250 |
| 100+ | RM21.870 |
| 500+ | RM20.670 |
| 2000+ | RM19.460 |
| 4000+ | RM19.450 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
RM242.50
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBL075N065SC1
Order Code4472905RL
Product RangeEliteSiC Series
Technical Datasheet
Continuous Drain Current Id37A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.085ohm
No. of Pins8Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation139W
Operating Temperature Max175°C
Product RangeEliteSiC Series
Technical Specifications
Continuous Drain Current Id
37A
Drain Source On State Resistance
0.085ohm
Rds(on) Test Voltage
18V
Power Dissipation
139W
Product Range
EliteSiC Series
Drain Source Voltage Vds
650V
No. of Pins
8Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001