Print Page
NVBG160N120SC1
SIC MOSFET, N-CH, 20V, 19.5A, TO-263HV
Image is for illustrative purposes only. Please refer to product description.
800 In Stock
Need more?
800 Delivery in 4-5 Business Days(US stock)
| Quantity | Price |
|---|---|
| 1+ | RM56.070 |
Price for:Each (Supplied on Full Reel)
Minimum: 1
Multiple: 1
RM56.07
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVBG160N120SC1
Order Code4130211
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id19.5A
Drain Source On State Resistance0.16ohm
Transistor Case StyleTO-263HV (D2PAK)
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3V
Operating Temperature Max175°C
Technical Specifications
Channel Type
N Channel
Drain Source On State Resistance
0.16ohm
Rds(on) Test Voltage
20V
Operating Temperature Max
175°C
Continuous Drain Current Id
19.5A
Transistor Case Style
TO-263HV (D2PAK)
Gate Source Threshold Voltage Max
3V
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002087