Print Page
NXH011F120M3F2PTHG
Silicon Carbide MOSFET, EliteSiC, M3S, Full Bridge, N Channel, 105 A, 1.2 kV, 0.016 ohm, PIM
Image is for illustrative purposes only. Please refer to product description.
72 In Stock
Need more?
72 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | RM679.650 |
| 5+ | RM636.580 |
| 10+ | RM593.500 |
Price for:Each
Minimum: 1
Multiple: 1
RM679.65
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH011F120M3F2PTHG
Order Code4472918
Technical Datasheet
MOSFET Module ConfigurationFull Bridge
Channel TypeN Channel
Continuous Drain Current Id105A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.016ohm
Transistor Case StylePIM
No. of Pins34Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation244W
Operating Temperature Max150°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Full Bridge
Continuous Drain Current Id
105A
Drain Source On State Resistance
0.016ohm
No. of Pins
34Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
PIM
Rds(on) Test Voltage
18V
Power Dissipation
244W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001