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RQJ0301HGDQS#H3
MOSFET, P CH, 30V, 5.2A, SC-62
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerRENESAS
Manufacturer Part NoRQJ0301HGDQS#H3
Order Code2135196
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.2A
Drain Source On State Resistance0.048ohm
Transistor Case StyleSOT-89
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.2A
Transistor Case Style
SOT-89
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.048ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 2A - 4 weeks
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00005