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2STC5242
Bipolar (BJT) Single Transistor, NPN, 230 V, 8 A, 130 W, TO-3P, Through Hole
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part No2STC5242
Order Code1542188
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max230V
Continuous Collector Current8A
Power Dissipation130W
Transistor Case StyleTO-3P
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Product Overview
The 2STC5242 is a 230V High Power NPN Epitaxial Planar Bipolar Transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The transistor shows good gain linearity behaviour. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- High breakdown voltage
- Complementary to the 2STA1962
- Fast-switching speed
- Well-controlled hFE parameter for increased reliability
Applications
Audio
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
8A
Transistor Case Style
TO-3P
Operating Temperature Max
150°C
Collector Emitter Voltage Max
230V
Power Dissipation
130W
Transistor Mounting
Through Hole
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00753