L6384ED
IGBT/MOSFET Driver, Half Bridge, 11.5V-16.6V Supply, 650mA Out, 200ns Delay, SOIC-8
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| Quantity | Price |
|---|---|
| 1+ | RM6.500 |
| 10+ | RM6.250 |
| 50+ | RM6.000 |
| 100+ | RM5.750 |
| 250+ | RM5.500 |
| 500+ | RM5.250 |
| 1000+ | RM5.000 |
| 2500+ | RM4.740 |
Product Information
Product Overview
The L6384ED is a High-voltage Gate Driver, manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT devices. This device has one input pin, one enable pin (DT/SD) and two output pins and guarantees matched delays between low-side and high-side sections, thus simplifying device's high frequency operation. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.
- 600V High voltage rail
- dV/dt Immunity ±50V/nsec in full temperature range
- 400mA Source current
- 650mA Sink current
- Switching times 50/30ns rise/fall with 1nF load
- Shutdown input
- Dead time setting
- Under voltage lockout
- Integrated bootstrap diode
- Clamping on VCC
Applications
HVAC, Motor Drive & Control, Lighting, Automation & Process Control, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
2Channels
Half Bridge
8Pins
Surface Mount
400mA
11.5V
-45°C
200ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
SOIC
Inverting
650mA
16.6V
125°C
200ns
-
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate