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SCT027H65G3AG
Silicon Carbide MOSFET, Single, N Channel, 60 A, 650 V, 0.0393 ohm, H2PAK
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT027H65G3AG
Order Code4555392RL
Technical Datasheet
3 In Stock
5 more incoming. You can reserve stock now
3 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 10+ | RM57.920 |
| 50+ | RM53.480 |
| 200+ | RM52.410 |
| 500+ | RM51.340 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
RM579.20
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT027H65G3AG
Order Code4555392RL
Technical Datasheet
Continuous Drain Current Id60A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.0393ohm
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation300W
Operating Temperature Max175°C
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Continuous Drain Current Id
60A
Drain Source On State Resistance
0.0393ohm
Rds(on) Test Voltage
18V
Power Dissipation
300W
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
650V
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001