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STW12N150K5
Power MOSFET, N Channel, 1.5 kV, 7 A, 1.6 ohm, TO-247, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW12N150K5
Order Code3367080
Product RangeMDmesh K5
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | RM42.280 |
| 5+ | RM33.490 |
| 10+ | RM24.690 |
| 50+ | RM24.200 |
| 100+ | RM23.710 |
| 250+ | RM23.210 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW12N150K5
Order Code3367080
Product RangeMDmesh K5
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1.5kV
Continuous Drain Current Id7A
Drain Source On State Resistance1.6ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh K5
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
STW12N150K5 is a N-channel MDmesh™ K5 power MOSFET. It is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Suitable for switching applications.
- Industry’s lowest RDS(on) area, industry’s best figure of merit (FoM)
- Ultra low gate charge, 100% avalanche tested, Zener-protected
- 1500V min drain-source breakdown voltage (VGS = 0V, ID = 1mA, TCASE = 25°C)
- 1µA max zero gate voltage drain current (VGS = 0V, VDS = 1500V, TCASE = 25°C)
- 4V typ gate threshold voltage (VDS = VGS, ID = 100µA, TCASE = 25°C)
- 1.6ohm typ static drain-source on resistance (VGS = 10V, ID = 3.5A, TCASE = 25°C)
- 1360pF typ input capacitance (VGS = 0V, VDS = 10 V, f = 1MHz, TCASE = 25°C)
- 80pF typ output capacitance (VGS = 0V, VDS = 10 V, f = 1MHz, TCASE = 25°C)
- 47nC typ total gate charge (VDD = 1200V, ID = 7A, VGS = 10V, TCASE = 25°C)
- TO-247 package, operating junction temperature range from -55 to 150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1.5kV
Drain Source On State Resistance
1.6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
MDmesh K5
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00443