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ManufacturerTOSHIBA
Manufacturer Part NoHN4B102J(TE85L,F)
Order Code4062480
Also Known AsHN4B102J, HN4B102J(TE85L
Technical Datasheet
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Quantity | Price |
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1+ | RM4.070 |
10+ | RM2.610 |
100+ | RM1.750 |
500+ | RM1.370 |
1000+ | RM1.180 |
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoHN4B102J(TE85L,F)
Order Code4062480
Also Known AsHN4B102J, HN4B102J(TE85L
Technical Datasheet
Transistor PolarityNPN, PNP
Collector Emitter Voltage Max NPN30V
Collector Emitter Voltage Max PNP30V
Continuous Collector Current NPN2A
Continuous Collector Current PNP2A
Power Dissipation NPN1.1W
Power Dissipation PNP1.1W
DC Current Gain hFE Min NPN40hFE
DC Current Gain hFE Min PNP40hFE
Transistor Case StyleSOT-25
No. of Pins5Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN-
Transition Frequency PNP-
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
NPN, PNP
Collector Emitter Voltage Max PNP
30V
Continuous Collector Current PNP
2A
Power Dissipation PNP
1.1W
DC Current Gain hFE Min PNP
40hFE
No. of Pins
5Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
Collector Emitter Voltage Max NPN
30V
Continuous Collector Current NPN
2A
Power Dissipation NPN
1.1W
DC Current Gain hFE Min NPN
40hFE
Transistor Case Style
SOT-25
Transistor Mounting
Surface Mount
Transition Frequency NPN
-
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001