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HN4C51J(TE85L,F)
Bipolar Transistor Array, Dual NPN, 120 V, 100 mA, 300 mW
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ManufacturerTOSHIBA
Manufacturer Part NoHN4C51J(TE85L,F)
Order Code4415968RL
Also Known AsHN4C51J, HN4C51J(TE85L
Technical Datasheet
Packaging Options
2,295 In Stock
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| Quantity | Price |
|---|---|
| 100+ | RM0.992 |
| 500+ | RM0.759 |
| 1000+ | RM0.528 |
| 5000+ | RM0.506 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
RM99.20
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoHN4C51J(TE85L,F)
Order Code4415968RL
Also Known AsHN4C51J, HN4C51J(TE85L
Technical Datasheet
Collector Emitter Voltage Max NPN120V
Continuous Collector Current NPN100mA
Power Dissipation NPN300mW
DC Current Gain hFE Min NPN200hFE
No. of Pins5Pins
Operating Temperature Max150°C
Transition Frequency NPN100MHz
Technical Specifications
Collector Emitter Voltage Max NPN
120V
Power Dissipation NPN
300mW
No. of Pins
5Pins
Transition Frequency NPN
100MHz
Continuous Collector Current NPN
100mA
DC Current Gain hFE Min NPN
200hFE
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000014