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UJ3C065080B3
Silicon Carbide MOSFET, Single, N Channel, 25 A, 650 V, 0.08 ohm, D2PAK
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496 In Stock
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| Quantity | Price |
|---|---|
| 1+ | RM35.710 |
| 10+ | RM32.040 |
| 100+ | RM29.150 |
| 500+ | RM26.730 |
| 800+ | RM24.310 |
| 1600+ | RM23.830 |
| 2400+ | RM23.340 |
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Multiple: 1
RM35.71
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Product Information
ManufacturerONSEMI
Manufacturer Part NoUJ3C065080B3
Order Code4014257
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id25A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.08ohm
Transistor Case StyleD2PAK
No. of Pins3Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max5V
Power Dissipation115W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
25A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
D2PAK
Rds(on) Test Voltage
12V
Power Dissipation
115W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0014