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IRFD024PBF
Power MOSFET, N Channel, 60 V, 2.5 A, 0.1 ohm, DIP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Overview
- N-channel power MOSFET in HVDIP package
- Dynamic dV/dt rating
- For automatic insertion
- End stackable
- 175°C operating temperature
- Fast switching
- Ease of paralleling
- Simple drive requirements
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Transistor Mounting
Through Hole
Qualification
-
Transistor Case Style
DIP
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536