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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFR430APBF
Order Code8658846
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id5A
Drain Source On State Resistance1.7ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IRFR430APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
- Simple drive requirements
- Improved gate, avalanche and dynamic dV/dt<lt/>BR<gt/>ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Effective COSS specified
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
1.7ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for IRFR430APBF
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004