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SI1023CX-T1-GE3
Dual MOSFET, P Channel, 20 V, 20 V, 450 mA, 450 mA, 0.63 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1023CX-T1-GE3
Order Code3772734RL
Product RangeTrenchFET Series
Technical Datasheet
Packaging Options
16,989 In Stock
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| Quantity | Price |
|---|---|
| 100+ | RM0.813 |
| 500+ | RM0.679 |
| 1000+ | RM0.556 |
| 5000+ | RM0.545 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
RM81.30
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1023CX-T1-GE3
Order Code3772734RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id450mA
Continuous Drain Current Id N Channel450mA
On Resistance Rds(on)0.63ohm
Continuous Drain Current Id P Channel450mA
Drain Source On State Resistance N Channel0.63ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.63ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleSC-89
Gate Source Threshold Voltage Max1V
Power Dissipation Pd220mW
No. of Pins6Pins
Power Dissipation N Channel220mW
Power Dissipation P Channel220mW
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
450mA
Continuous Drain Current Id P Channel
450mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Power Dissipation P Channel
220mW
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
450mA
On Resistance Rds(on)
0.63ohm
Drain Source On State Resistance N Channel
0.63ohm
Drain Source On State Resistance P Channel
0.63ohm
Transistor Case Style
SC-89
Power Dissipation Pd
220mW
Power Dissipation N Channel
220mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001