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SI2300DS-T1-GE3
MOSFET, N CHANNEL, 30V, 3.6A, SOT-23-3
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3,011 In Stock
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3011 Delivery in 4-5 Business Days(US stock)
| Quantity | Price |
|---|---|
| 1+ | RM1.570 |
| 10+ | RM0.974 |
| 100+ | RM0.869 |
| 500+ | RM0.791 |
| 1000+ | RM0.607 |
| 5000+ | RM0.551 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
RM1.57
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2300DS-T1-GE3
Order Code2459407
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source On State Resistance0.068ohm
Transistor Case StyleSOT-23
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Operating Temperature Max150°C
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source On State Resistance
0.068ohm
Rds(on) Test Voltage
4.5V
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
30V
Transistor Case Style
SOT-23
Gate Source Threshold Voltage Max
600mV
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Alternatives for SI2300DS-T1-GE3
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000044