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SI2319CDS-T1-GE3
Power MOSFET, P Channel, 40 V, 4.4 A, 0.077 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 100+ | RM1.590 |
| 500+ | RM1.230 |
| 1000+ | RM1.120 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM159.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2319CDS-T1-GE3
Order Code1858942RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id4.4A
Drain Source On State Resistance0.077ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2319CDS-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature.
- ±20V Gate-source voltage
Applications
Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.077ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000181