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SI4925DDY-T1-GE3
Dual MOSFET, P Channel, 30 V, 8 A
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| Quantity | Price |
|---|---|
| 100+ | RM2.990 |
| 500+ | RM2.530 |
| 1000+ | RM2.120 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
RM299.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4925DDY-T1-GE3
Order Code1779276RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.024ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.024ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
No. of Pins8Pins
Power Dissipation Pd5W
Power Dissipation N Channel-
Power Dissipation P Channel5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4925DDY-T1-GE3 is a -30V Dual P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 100% UIS Tested
Applications
Power Management, Consumer Electronics, Computers & Computer Peripherals
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.024ohm
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
0.024ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
5W
Power Dissipation P Channel
5W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005