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SI4946BEY-T1-GE3
Dual MOSFET, N Channel, 60 V, 60 V, 6.5 A, 6.5 A, 0.033 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4946BEY-T1-GE3
Order Code2646385RL
Product RangeTrenchFET Series
Technical Datasheet
1,590 In Stock
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| Quantity | Price |
|---|---|
| 100+ | RM4.930 |
| 500+ | RM4.020 |
| 1000+ | RM3.570 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
RM493.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4946BEY-T1-GE3
Order Code2646385RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id6.5A
On Resistance Rds(on)0.033ohm
Continuous Drain Current Id N Channel6.5A
Continuous Drain Current Id P Channel6.5A
Drain Source On State Resistance N Channel0.033ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.033ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.4V
No. of Pins8Pins
Power Dissipation Pd3.7W
Power Dissipation N Channel3.7W
Power Dissipation P Channel3.7W
Operating Temperature Max175°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- Dual N-channel 60-V (D-S) TrenchFET® power MOSFET
- 175°C maximum junction temperature
- 100 % Rg Tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.033ohm
Continuous Drain Current Id P Channel
6.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.033ohm
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
3.7W
Power Dissipation P Channel
3.7W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
6.5A
Continuous Drain Current Id N Channel
6.5A
Drain Source On State Resistance N Channel
0.033ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
3.7W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000142