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SI5504DC-T1-E3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.9 A, 3.9 A, 0.072 ohm
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5504DC-T1-E3
Order Code1470126RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.9A
Continuous Drain Current Id P Channel3.9A
Transistor Case Style1206
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.9A
No. of Pins
8Pins
Power Dissipation P Channel
1.1W
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.9A
Transistor Case Style
1206
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001