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SI9945BDY-T1-GE3
Dual MOSFET, N Channel, 60 V, 5.3 A, 0.046 ohm
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| Quantity | Price |
|---|---|
| 100+ | RM3.030 |
| 500+ | RM2.400 |
| 1000+ | RM2.120 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
RM303.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9945BDY-T1-GE3
Order Code1794822RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id5.3A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.046ohm
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.046ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
No. of Pins8Pins
Power Dissipation Pd3.1W
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI9945BDY-T1-GE3 is a 60V Dual N-channel TrenchFET® Power MOSFET. Suitable for use in LCD TV CCFL inverter and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
Applications
Power Management, Consumer Electronics
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
5.3A
On Resistance Rds(on)
0.046ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.046ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
3.1W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
5.3A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000119