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| Quantity | Price |
|---|---|
| 1+ | RM5.840 |
| 10+ | RM3.960 |
| 100+ | RM2.940 |
| 500+ | RM2.360 |
| 1000+ | RM2.100 |
Price for:Tube of 1
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Multiple: 1
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHD5N80AE-GE3
Order Code3650277
Product RangeE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4.4A
Drain Source On State Resistance1.35ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation62.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.4A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
62.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
1.35ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for SIHD5N80AE-GE3
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Switzerland
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Switzerland
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005